? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c -140 a i dm t c = 25 c, pulse width limited by t jm - 400 a i a t c = 25 c -140 a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 568 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4 g to-247 6 g ds100371b(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 10 a t j = 125 c -150 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 10 m trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTT140P10T ixth140p10t v dss = -100v i d25 = -140a r ds(on) 10 m g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab) features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications
IXTT140P10T ixth140p10t ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 70 115 s c iss 32.8 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 2290 pf c rss 700 pf t d(on) 58 ns t r 26 ns t d(off) 86 ns t f 26 ns q g(on) 400 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 125 nc q gd 100 nc r thjc 0.22 c/w r thcs to-247 0.21 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v -140 a i sm repetitive, pulse width limited by t jm - 560 a v sd i f = -100a, v gs = 0v, note 1 -1.4 v t rr 130 ns q rm 650 nc i rm -10 a i f = - 70a, -di/dt = -100a/ s v r = -100v, v gs = 0v to-247 outline terminals: 1 - gate 2 - drain 3 - source to-268 outline terminals: 1 - gate 2,4 - drain 3 - source e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc note 1. pulse test, t 300 s, duty cycle, d 2%.
? 2013 ixys corporation, all rights reserved IXTT140P10T ixth140p10t fig. 1. output characteristics @ t j = 25oc -140 -120 -100 -80 -60 -40 -20 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -900 -800 -700 -600 -500 -400 -300 -200 -100 0 -50 -40 -30 -20 -10 0 v ds - volts i d - amperes v gs = -10v - 9v - 5 v - 6 v - 7 v - 8 v fig. 3. output characteristics @ t j = 125oc -140 -120 -100 -80 -60 -40 -20 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4v - 5v - 6v fig. 4. r ds(on) normalized to i d = - 70a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 140a i d = - 70a fig. 5. r ds(on) normalized to i d = - 70a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -350 -300 -250 -200 -150 -100 -50 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -160 -140 -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTT140P10T ixth140p10t ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -6.2 -5.8 -5.4 -5 -4.6 -4.2 -3.8 -3.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -350 -300 -250 -200 -150 -100 -50 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 70a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - -- - - - 100ms 25s
? 2013 ixys corporation, all rights reserved IXTT140P10T ixth140p10t fig. 14. resistive turn-on rise time vs. drain current 10 20 30 40 50 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 40 60 80 100 120 140 160 180 200 12345678910 r g - ohms t r - nanoseconds 0 40 80 120 160 200 240 280 320 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = -140a i d = - 70a fig. 16. resistive turn-off switching times vs. junction temperature 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 60 80 100 120 140 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v i d = - 140a i d = - 70a i d = - 70a fig. 17. resistive turn-off switching times vs. drain current 40 60 80 100 120 140 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 i d - amperes t f - nanoseconds 22 24 26 28 30 32 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 10 20 30 40 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v i d = - 70a i d = -140a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 12345678910 r g - ohms t f - nanoseconds 0 40 80 120 160 200 240 280 320 360 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = -140a i d = - 70a
IXTT140P10T ixth140p10t ixys reserves the right to change limits, test conditions, and dimensions. fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_140p10t(a8-p10) 01-29-13
|
